On optimization of manufacturing of a switched-capacitor step-down DC–DC converter to increase integration rate of elements

Evgeny L. Pankratov

Abstract


In this paper we introduce an approach to increase integration rate of elements of a switched-capacitor step-down DC–DC converter. Framework the approach we consider a heterostructure with special configuration. Several specific areas of the heterostructure should be doped by diffusion or ion implantation. Annealing of dopant and/or radiation defects should be optimized.

References


V.I. Lachin, N.S. Savelov. Electronics (Phoenix, Rostov-na-Donu, 2001).

A.G. Alexenko, I.I. Shagurin. Microcircuitry (Radio and communication, Mos-cow, 1990).

N.A. Avaev, Yu.E. Naumov, V.T. Frolkin. Basis of microelectronics (Radio and communication, Moscow, 1991).

R.R. Ghiasi, A. Sahafi, J.S. Geshlaghi, Z.D. Kouzekanani. Analog. Integr. Circ. Sig. Process. Vol. 84. P. 215-222 (2015).

D. Fathi, B. Forouzandeh, N. Masoumi. Nano. Vol. 4 (4). P. 233-238 (2009).

S.A. Chachuli, P.N.A. Fasyar, N. Soin, N.M. Kar, N. Yusop. Mat. Sci. Sem. Proc. Vol. 24. P. 9-14 (2014).

A.O. Ageev, A.E. Belyaev, N.S. Boltovets, V.N. Ivanov, R.V. Konakova, Ya.Ya. Kudrik, P.M. Litvin, V.V. Milenin, A.V. Sachenko. Semiconductors. Vol. 43 (7). P. 897-903 (2009).

Z. Li, J. Waldron, T. Detchprohm, C. Wetzel, R.F. Karlicek, Jr.T.P. Chow. Appl. Phys. Lett. Vol. 102 (19). P. 192107-192109 (2013).

Jung-Hui Tsai, Shao-Yen Chiu, Wen-Shiung Lour, Der-Feng Guo. Semiconduc-tors. Vol. 43 (7). P. 971-974 (2009).

O.V. Alexandrov, A.O. Zakhar'in, N.A. Sobolev, E.I. Shek, M.M. Makoviychuk, E.O. Parshin. Semiconductors. Vol. 32 (9). P. 1029-1032 (1998).

M.J. Kumar, T.V. Singh. Int. J. Nanoscience. Vol. 7 (2-3). P. 81-84 (2008).

P. Sinsermsuksakul, K. Hartman, S.B. Kim, J. Heo, L. Sun, H.H. Park, R. Chak-raborty, T. Buonassisi, R.G. Gordon. Appl. Phys. Lett. Vol. 102 (5). P. 053901-053905 (2013).

J.G. Reynolds, C.L. Reynolds, Jr.A. Mohanta, J.F. Muth, J.E. Rowe, H.O. Everitt, D.E. Aspnes. Appl. Phys. Lett. Vol. 102 (15). P. 152114-152118 (2013).

K.K. Ong, K.L. Pey, P.S. Lee, A.T.S. Wee, X.C. Wang, Y.F. Chong. Appl. Phys. Lett. Vol. 89 (17). P. 172111-172114 (2006).

H.T. Wang, L.S. Tan, E. F. Chor. J. Appl. Phys. Vol. 98 (9). P. 094901-094905 (2006).

S.T. Shishiyanu, T.S. Shishiyanu, S.K. Railyan. Semiconductors. Vol. 36 (5). P. 611-617 (2002).

Yu.V. Bykov, A.G. Yeremeev, N.A. Zharova, I.V. Plotnikov, K.I. Rybakov, M.N. Drozdov, Yu.N. Drozdov, V.D. Skupov. Radiophysics and Quantum Elec-tronics. Vol. 43 (3). P. 836-843 (2003).

E.L. Pankratov, E.A. Bulaeva. Reviews in Theoretical Science. Vol. 1 (1). P. 58-82 (2013).

Yu.N. Erofeev. Pulse devices (Higher School, Moscow, 1989, in Russian).

V.V. Kozlivsky. Modification of semiconductors by proton beams (Nauka, Sant-Peterburg, 2003).

Z.Yu. Gotra. Technology of microelectronic devices (Radio and communication, Moscow, 1991).

V.L. Vinetskiy, G.A. Kholodar', Radiative physics of semiconductors. ("Nauko-va Dumka", Kiev, 1979).

P.M. Fahey, P.B. Griffin, J.D. Plummer. Rev. Mod. Phys. Vol. 61 (2). P. 289-388 (1989).

A.N. Tikhonov, A.A. Samarskii. The mathematical physics equations (Moscow, Nauka 1972) (in Russian).

H.S. Carslaw, J.C. Jaeger. Conduction of heat in solids (Oxford University Press, 1964).

E.L. Pankratov. Russian Microelectronics. Vol. 36 (1). P. 33-39 (2007).

E.L. Pankratov. Int. J. Nanoscience. Vol. 7 (4-5). P. 187–197 (2008).

E.L. Pankratov. J. Comp. Theor. Nanoscience. Vol. 14 (10). P.4885-4899 (2017).

E.L. Pankratov. Advanced science, engineering and medicine. Vol. 9 (9). P. 787 - 801 (2017).

E.L. Pankratov, E.A. Bulaeva. Multidiscipline Modeling in Materials and Struc-tures. Vol. 13 (4). P. 664-677 (2017).

E.L. Pankratov, E.A. Bulaeva. Int. J. Micro-Nano Scale Transp. Vol. 4 (1). P. 17-31 (2014).

E.L. Pankratov, E.A. Bulaeva. Multidiscipline Modeling in Materials and Struc-tures. Vol. 12 (4). P. 578-604 (2016).

E.L. Pankratov, E.A. Bulaeva. Materials science in semiconductor processing. Vol. 34. P. 260-268 (2015).




DOI: http://doi.org/10.11591/ijaas.v10.i2.pp%25p
Total views : 12 times

Refbacks

  • There are currently no refbacks.


Copyright (c) 2021 Institute of Advanced Engineering and Science

Creative Commons License
This work is licensed under a Creative Commons Attribution-ShareAlike 4.0 International License.

International Journal of Advances in Applied Sciences (IJAAS)
p-ISSN 2252-8814, e-ISSN 2722-2594


Web Analytics View IJAAS Stats